INTERFACIAL TUNNELING BARRIER HEIGHTS IN TRIPLE-LAYER DIELECTRICS

被引:13
作者
BAUNACH, R
SPITZER, A
机构
[1] Siemens AG, Munich, West Ger, Siemens AG, Munich, West Ger
关键词
We would like to thank Dr. W. Hiinlein and Dr. H. Reisinger for the preparation of the samples and Professor G. Landwehr for enlightening discussions. This work was supported by the Federal Department of Research and Technology (sign NT 2696);
D O I
10.1016/0169-4332(87)90091-2
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
11
引用
收藏
页码:180 / 185
页数:6
相关论文
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