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CARRIER CONDUCTION IN ULTRATHIN NITRIDED OXIDE-FILMS
被引:68
作者
:
SUZUKI, E
论文数:
0
引用数:
0
h-index:
0
机构:
ELECTROTECH LAB,SAKURA,IBARAKI 305,JAPAN
ELECTROTECH LAB,SAKURA,IBARAKI 305,JAPAN
SUZUKI, E
[
1
]
SCHRODER, DK
论文数:
0
引用数:
0
h-index:
0
机构:
ELECTROTECH LAB,SAKURA,IBARAKI 305,JAPAN
ELECTROTECH LAB,SAKURA,IBARAKI 305,JAPAN
SCHRODER, DK
[
1
]
HAYASHI, Y
论文数:
0
引用数:
0
h-index:
0
机构:
ELECTROTECH LAB,SAKURA,IBARAKI 305,JAPAN
ELECTROTECH LAB,SAKURA,IBARAKI 305,JAPAN
HAYASHI, Y
[
1
]
机构
:
[1]
ELECTROTECH LAB,SAKURA,IBARAKI 305,JAPAN
来源
:
JOURNAL OF APPLIED PHYSICS
|
1986年
/ 60卷
/ 10期
关键词
:
D O I
:
10.1063/1.337568
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:3616 / 3621
页数:6
相关论文
共 18 条
[1]
HIGH-TEMPERATURE RAPID THERMAL NITRIDATION OF SILICON DIOXIDE FOR FUTURE VLSI APPLICATIONS
CHANG, CC
论文数:
0
引用数:
0
h-index:
0
机构:
AT&T BELL LABS,MURRAY HILL,NJ 07974
CHANG, CC
KAMGAR, A
论文数:
0
引用数:
0
h-index:
0
机构:
AT&T BELL LABS,MURRAY HILL,NJ 07974
KAMGAR, A
KAHNG, D
论文数:
0
引用数:
0
h-index:
0
机构:
AT&T BELL LABS,MURRAY HILL,NJ 07974
KAHNG, D
[J].
IEEE ELECTRON DEVICE LETTERS,
1985,
6
(09)
: 476
-
478
[2]
CAPTURE AND TUNNEL EMISSION OF ELECTRONS BY DEEP LEVELS IN ULTRATHIN NITRIDED OXIDES ON SILICON
CHANG, ST
论文数:
0
引用数:
0
h-index:
0
机构:
XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304
XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304
CHANG, ST
JOHNSON, NM
论文数:
0
引用数:
0
h-index:
0
机构:
XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304
XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304
JOHNSON, NM
LYON, SA
论文数:
0
引用数:
0
h-index:
0
机构:
XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304
XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304
LYON, SA
[J].
APPLIED PHYSICS LETTERS,
1984,
44
(03)
: 316
-
318
[3]
TRAPPING EFFECTS IN THIN OXYNITRIDE LAYERS IN METAL-INSULATOR-SEMICONDUCTOR DEVICES
FAIGON, A
论文数:
0
引用数:
0
h-index:
0
FAIGON, A
SHAPPIR, J
论文数:
0
引用数:
0
h-index:
0
SHAPPIR, J
[J].
JOURNAL OF APPLIED PHYSICS,
1985,
58
(12)
: 4633
-
4637
[4]
RESONANCE TUNNELING THROUGH IMPURITY STATES IN METAL-INSULATOR-METAL JUNCTIONS
GADZUK, JW
论文数:
0
引用数:
0
h-index:
0
GADZUK, JW
[J].
JOURNAL OF APPLIED PHYSICS,
1970,
41
(01)
: 286
-
&
[5]
Good RH., 1956, FIELD EMISSION, P176
[6]
DIRECT THERMAL NITRIDATION OF SILICON DIOXIDE FILMS IN ANHYDROUS AMMONIA GAS
ITO, T
论文数:
0
引用数:
0
h-index:
0
ITO, T
NOZAKI, T
论文数:
0
引用数:
0
h-index:
0
NOZAKI, T
ISHIKAWA, H
论文数:
0
引用数:
0
h-index:
0
ISHIKAWA, H
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1980,
127
(09)
: 2053
-
2057
[7]
LAI SK, 1983, 1983 INT EL DEV M WA, P190
[8]
FOWLER-NORDHEIM TUNNELING INTO THERMALLY GROWN SIO2
LENZLINGER, M
论文数:
0
引用数:
0
h-index:
0
机构:
Fairchild Semiconductor Research and Development Laboratory, Palo Alto
LENZLINGER, M
SNOW, EH
论文数:
0
引用数:
0
h-index:
0
机构:
Fairchild Semiconductor Research and Development Laboratory, Palo Alto
SNOW, EH
[J].
JOURNAL OF APPLIED PHYSICS,
1969,
40
(01)
: 278
-
+
[9]
RAPID THERMAL NITRIDATION OF SIO2 FOR NITROXIDE THIN DIELECTRICS
MOSLEHI, MM
论文数:
0
引用数:
0
h-index:
0
MOSLEHI, MM
SARASWAT, KC
论文数:
0
引用数:
0
h-index:
0
SARASWAT, KC
SHATAS, SC
论文数:
0
引用数:
0
h-index:
0
SHATAS, SC
[J].
APPLIED PHYSICS LETTERS,
1985,
47
(10)
: 1113
-
1115
[10]
THERMAL NITRIDATION OF SI AND SIO2 FOR VLSI
MOSLEHI, MM
论文数:
0
引用数:
0
h-index:
0
MOSLEHI, MM
SARASWAT, KC
论文数:
0
引用数:
0
h-index:
0
SARASWAT, KC
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1985,
32
(02)
: 106
-
123
←
1
2
→
共 18 条
[1]
HIGH-TEMPERATURE RAPID THERMAL NITRIDATION OF SILICON DIOXIDE FOR FUTURE VLSI APPLICATIONS
CHANG, CC
论文数:
0
引用数:
0
h-index:
0
机构:
AT&T BELL LABS,MURRAY HILL,NJ 07974
CHANG, CC
KAMGAR, A
论文数:
0
引用数:
0
h-index:
0
机构:
AT&T BELL LABS,MURRAY HILL,NJ 07974
KAMGAR, A
KAHNG, D
论文数:
0
引用数:
0
h-index:
0
机构:
AT&T BELL LABS,MURRAY HILL,NJ 07974
KAHNG, D
[J].
IEEE ELECTRON DEVICE LETTERS,
1985,
6
(09)
: 476
-
478
[2]
CAPTURE AND TUNNEL EMISSION OF ELECTRONS BY DEEP LEVELS IN ULTRATHIN NITRIDED OXIDES ON SILICON
CHANG, ST
论文数:
0
引用数:
0
h-index:
0
机构:
XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304
XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304
CHANG, ST
JOHNSON, NM
论文数:
0
引用数:
0
h-index:
0
机构:
XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304
XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304
JOHNSON, NM
LYON, SA
论文数:
0
引用数:
0
h-index:
0
机构:
XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304
XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304
LYON, SA
[J].
APPLIED PHYSICS LETTERS,
1984,
44
(03)
: 316
-
318
[3]
TRAPPING EFFECTS IN THIN OXYNITRIDE LAYERS IN METAL-INSULATOR-SEMICONDUCTOR DEVICES
FAIGON, A
论文数:
0
引用数:
0
h-index:
0
FAIGON, A
SHAPPIR, J
论文数:
0
引用数:
0
h-index:
0
SHAPPIR, J
[J].
JOURNAL OF APPLIED PHYSICS,
1985,
58
(12)
: 4633
-
4637
[4]
RESONANCE TUNNELING THROUGH IMPURITY STATES IN METAL-INSULATOR-METAL JUNCTIONS
GADZUK, JW
论文数:
0
引用数:
0
h-index:
0
GADZUK, JW
[J].
JOURNAL OF APPLIED PHYSICS,
1970,
41
(01)
: 286
-
&
[5]
Good RH., 1956, FIELD EMISSION, P176
[6]
DIRECT THERMAL NITRIDATION OF SILICON DIOXIDE FILMS IN ANHYDROUS AMMONIA GAS
ITO, T
论文数:
0
引用数:
0
h-index:
0
ITO, T
NOZAKI, T
论文数:
0
引用数:
0
h-index:
0
NOZAKI, T
ISHIKAWA, H
论文数:
0
引用数:
0
h-index:
0
ISHIKAWA, H
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1980,
127
(09)
: 2053
-
2057
[7]
LAI SK, 1983, 1983 INT EL DEV M WA, P190
[8]
FOWLER-NORDHEIM TUNNELING INTO THERMALLY GROWN SIO2
LENZLINGER, M
论文数:
0
引用数:
0
h-index:
0
机构:
Fairchild Semiconductor Research and Development Laboratory, Palo Alto
LENZLINGER, M
SNOW, EH
论文数:
0
引用数:
0
h-index:
0
机构:
Fairchild Semiconductor Research and Development Laboratory, Palo Alto
SNOW, EH
[J].
JOURNAL OF APPLIED PHYSICS,
1969,
40
(01)
: 278
-
+
[9]
RAPID THERMAL NITRIDATION OF SIO2 FOR NITROXIDE THIN DIELECTRICS
MOSLEHI, MM
论文数:
0
引用数:
0
h-index:
0
MOSLEHI, MM
SARASWAT, KC
论文数:
0
引用数:
0
h-index:
0
SARASWAT, KC
SHATAS, SC
论文数:
0
引用数:
0
h-index:
0
SHATAS, SC
[J].
APPLIED PHYSICS LETTERS,
1985,
47
(10)
: 1113
-
1115
[10]
THERMAL NITRIDATION OF SI AND SIO2 FOR VLSI
MOSLEHI, MM
论文数:
0
引用数:
0
h-index:
0
MOSLEHI, MM
SARASWAT, KC
论文数:
0
引用数:
0
h-index:
0
SARASWAT, KC
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1985,
32
(02)
: 106
-
123
←
1
2
→