IRON REDISTRIBUTION AND COMPENSATION MECHANISMS IN SEMI-INSULATING SI-IMPLANTED INP

被引:17
作者
BAHIR, G
MERZ, JL
ABELSON, JR
SIGMON, TW
机构
[1] UNIV CALIF SANTA BARBARA,DEPT ELECT & COMP ENGN,SANTA BARBARA,CA 93106
[2] STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305
关键词
D O I
10.1063/1.343086
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:1009 / 1017
页数:9
相关论文
共 28 条
[1]   APPLICATIONS OF ELECTROCHEMICAL METHODS FOR SEMICONDUCTOR CHARACTERIZATION .1. HIGHLY REPRODUCIBLE CARRIER CONCENTRATION PROFILING OF VPE''HI-LO'' NORMAL-GAAS [J].
AMBRIDGE, T ;
STEVENSON, JL ;
REDSTALL, RM .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (01) :222-228
[2]  
Bahir G., 1986, Proceedings of the SPIE - The International Society for Optical Engineering, V623, P149, DOI 10.1117/12.961204
[3]   ELECTROCHEMICAL PROFILING OF ION-IMPLANTED INP [J].
BAHIR, G ;
MERZ, JL ;
ABELSON, JR ;
SIGMON, TW .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (09) :2187-2193
[4]  
BAHIR G, 1986, I PHYSICS C SERIES, V83, P283
[5]  
BISHOP SG, 1986, DEEP CTR SEMICONDUCT
[6]   SEMI-INSULATING PROPERTIES OF FE-IMPLANTED INP .2. DEEP LEVELS OF FE FROM THE STUDY OF P+-SEMI-INSULATING-N+ DIODES [J].
CHENG, J ;
FORREST, SR ;
TELL, B ;
WILT, D ;
SCHWARTZ, B ;
WRIGHT, P .
JOURNAL OF APPLIED PHYSICS, 1985, 58 (05) :1787-1797
[7]   AN APPLICATION OF THE BOLTZMANN TRANSPORT-EQUATION TO ION RANGE AND DAMAGE DISTRIBUTIONS IN MULTILAYERED TARGETS [J].
CHRISTEL, LA ;
GIBBONS, JF ;
MYLROIE, S .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (12) :6176-6182
[8]   STOICHIOMETRIC DISTURBANCES IN ION-IMPLANTED COMPOUND SEMICONDUCTORS [J].
CHRISTEL, LA ;
GIBBONS, JF .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (08) :5050-5055
[9]   THE ELECTRICAL CHARACTERISTICS OF INP IMPLANTED WITH THE COLUMN-IV ELEMENTS [J].
DONNELLY, JP ;
FERRANTE, GA .
SOLID-STATE ELECTRONICS, 1980, 23 (11) :1151-1154
[10]  
DUHAMEL N, 1987, RAPID THERMAL PROCES, V92, P443