DOSE DEPENDENCE OF SURFACE DAMAGE PROFILES FOR GE(111) IRRADIATED WITH 3 KEV AR+

被引：16

作者：

KIDO, Y

NAKANO, H

机构：

[1] Department of Physics, Faculty of Science and Engineering, Ritsumeikan University, Kita-ku, Kyoto, 603, 56-1, Kita-machi, Toji-in

来源：

SURFACE SCIENCE | 1990年 / 239卷 / 03期

关键词：

D O I：

10.1016/0039-6028(90)90228-Z

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The damage profiles of 3 keV Ar+ -irradiated Ge(111) were measured by medium energy ion scattering (MEIS) with 220 keV H+ beams. A depth resolution of 0.5 nm has been achieved using an electrostatic toroidal analyzer. With doses over 1 X 10(14) Ar+/cm2 at room temperature, an amorphous layer is formed and the amorphous layer thickness is saturated by a dose of 1 X 10(15) Ar+/Cm2. The saturated amorphous layer thickness of 12-13 nm obtained is in good agreement with that observed by a cross section transmission electron microscope. The dose dependence of the induced defects derived from MEIS is consistent with that determined by electron channeling pattern analysis. The amorphized damage profiles determined directly by MEIS agree well with those obtained by solving the rate equation using the unsaturated initial defect profile for a dose of 2 X 10(13) Ar+/cm2 and assuming a sputtering rate of 2.4-3.0.

引用

页码：254 / 260

页数：7

共 14 条

[1] REFINED UNIVERSAL POTENTIALS IN ATOMIC-COLLISIONS [J].

BIERSACK, JP ;

ZIEGLER, JF .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1982, 194 (1-3) :93-100

[2] ENERGY-LOSS OF SWIFT PROTON CLUSTERS IN SOLIDS [J].

BRANDT, W ;

RATKOWSKI, A ;

RITCHIE, RH .

PHYSICAL REVIEW LETTERS, 1974, 33 (22) :1325-1328

[3] BACKSCATTERING FROM CRYSTALS USING MOLECULAR HYDROGEN IONS [J].

CAYWOOD, JM ;

TOMBRELLO, TA ;

WEAVER, TA .

PHYSICS LETTERS A, 1971, A 37 (04) :350-+

[4] DEPTH PROFILES OF LATTICE DISORDER RESULTING FORM ION BOMBARDMENT OF SILICON SINGLE CRYSTALS [J].

FELDMAN, LC ;

RODGERS, JW .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (09) :3776-&

[5] ELECTRON CHANNELING PATTERNS IN THE SCANNING ELECTRON-MICROSCOPE [J].

JOY, DC ;

NEWBURY, DE ;

DAVIDSON, DL .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (08) :R81-R122

[6]

KANG HJ, 1984, JPN J APPL PHYS 2, V23, pL262, DOI 10.1143/JJAP.23.L262

[7] ION-SCATTERING ANALYSIS PROGRAMS FOR STUDYING SURFACE AND INTERFACE STRUCTURES [J].

KIDO, Y ;

KOSHIKAWA, T .

JOURNAL OF APPLIED PHYSICS, 1990, 67 (01) :187-193

[8] THE DISPLACEMENT OF ATOMS IN SOLIDS BY RADIATION [J].

KINCHIN, GH ;

PEASE, RS .

REPORTS ON PROGRESS IN PHYSICS, 1955, 18 :1-51

[9] DAMAGE PROFILING OF AR+-IRRADIATED SI(100) AND GAAS(100) BY MEDIUM ENERGY ION-SCATTERING [J].

KONOMI, I ;

KAWANO, A ;

KIDO, Y .

SURFACE SCIENCE, 1989, 207 (2-3) :427-440

[10]

MATSUNAMI N, 1983, ENERGY DEPENDENCE YI

← 1 2 →