NEW ELECTRON-IRRADIATION-INDUCED ELECTRON TRAP IN EPITAXIALLY GROWN SI-DOPED N-GAAS

被引：9

作者：

AURET, FD

GOODMAN, SA

MEYER, WE

机构：

[1] Physics Department, University of Pretoria

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 22期

关键词：

D O I：

10.1063/1.115219

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The defects induced by electron irradiation in epitaxially grown Si-doped n-GaAs were investigated by deep level transient spectroscopy. In addition to observing the well-known E1-E3 radiation induced defects, we detected another electron trap, E beta 3, with electronic properties, although similar to those of E3, not identical. E beta 3 is metastable and thus its energy level can be reproducibly removed by hole injection at 90-130 K and reintroduced by annealing above 160 K. We could induce E beta 3 by electron irradiation in Si-doped GaAs, but not in undoped GaAs. (C) 1995 American Institute of Physics.

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页码：3277 / 3279

页数：3

相关论文

共 14 条

[1] A METASTABLE ALPHA-PARTICLE IRRADIATION-INDUCED DEFECT IN N-GAAS [J].

AURET, FD ;

ERASMUS, RM ;

GOODMAN, SA .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1994, 33 (4A) :L491-L493

[2] ELECTRICAL CHARACTERIZATION OF DEFECTS INTRODUCED IN N-GAAS BY ALPHA-IRRADIATION AND BETA-IRRADIATION FROM RADIONUCLIDES [J].

AURET, FD ;

GOODMAN, SA ;

MYBURG, G ;

MEYER, WE .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1993, 56 (06) :547-553

[3] DEEP-LEVEL TRANSIENT SPECTROSCOPY CHARACTERIZATION OF ELECTRON-IRRADIATION-INDUCED HOLE TRAPS IN P-GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J].

AURET, FD ;

GOODMAN, SA ;

MEYER, WE ;

ERASMUS, RM ;

MYBURG, G .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1993, 32 (7B) :L974-L977

[4] ELECTRONIC AND TRANSFORMATION PROPERTIES OF A METASTABLE DEFECT INTRODUCED IN N-TYPE GAAS BY ALPHA-PARTICLE IRRADIATION [J].

AURET, FD ;

ERASMUS, RM ;

GOODMAN, SA ;

MEYER, WE .

PHYSICAL REVIEW B, 1995, 51 (24) :17521-17525

[5]

AURET FD, UNPUB

[6] CONFIGURATIONALLY MULTISTABLE DEFECT IN SILICON [J].

CHANTRE, A ;

KIMERLING, LC .

APPLIED PHYSICS LETTERS, 1986, 48 (15) :1000-1002

[7] DEFECT ANNEALING OF ALPHA-PARTICLE IRRADIATED N-GAAS [J].

GOODMAN, SA ;

AURET, FD ;

MYBURG, G .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1994, 59 (03) :305-310

[8] ELECTRIC-FIELD EFFECT ON THE EMISSION OF ELECTRON-IRRADIATION-INDUCED DEFECTS IN N-GAAS [J].

GOODMAN, SA ;

AURET, FD ;

MEYER, WE .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (4A) :1949-1953

[9]

Lang D. V., 1977, I PHYS C SER, V31, P70

[10] FAST CAPACITANCE TRANSIENT APPARATUS - APPLICATION TO ZNO AND O CENTERS IN GAP PARANORMAL JUNCTIONS [J].

LANG, DV .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) :3014-3022