ELECTRONIC AND TRANSFORMATION PROPERTIES OF A METASTABLE DEFECT INTRODUCED IN N-TYPE GAAS BY ALPHA-PARTICLE IRRADIATION

被引：21

作者：

AURET, FD

ERASMUS, RM

GOODMAN, SA

MEYER, WE

机构：

[1] Physics Department, University of Pretoria

来源：

PHYSICAL REVIEW B | 1995年 / 51卷 / 24期

关键词：

D O I：

10.1103/PhysRevB.51.17521

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report the electronic and transformation characteristics of an α-particle irradiation-induced defect in n-type GaAs with metastable properties, Eα3, as determined by deep-level transient spectroscopy. The Eα3, with an energy level at Ec-0.37 eV, captures electrons by multiphonon emission. It can be removed by hole injection and reintroduced during a first-order transformation under zero-bias annealing (activation energy ΔE=0.40 eV), or during reverse-bias annealing (ΔE=0.53 eV). It is suggested that Eα3 is related to a Si-impurity complex in n-type GaAs. Owing to its concentration and position in the band gap, Eα3 can significantly contribute to particle irradiation-induced carrier removal-due to its metastable properties the extent of the carrier removal may depend on bias and injection conditions. © 1995 The American Physical Society.

引用

页码：17521 / 17525

页数：5

共 19 条

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