A COMPARISON OF DEEP LEVEL DEFECTS IN OMVPE GAAS-LAYERS GROWN ON VARIOUS GAAS SUBSTRATE TYPES

被引：8

作者：

AURET, FD

NEL, M

LEITCH, AWR

机构：

[1] Univ of Port Elizabeth, Port Elizabeth, S Afr, Univ of Port Elizabeth, Port Elizabeth, S Afr

来源：

JOURNAL OF CRYSTAL GROWTH | 1988年 / 89卷 / 2-3期

关键词：

DEEP LEVEL DEFECTS - DEEP LEVEL TRANSIENT SPECTROSCOPY - ORGANOMETALLIC VAPOR PHASE EPITAXY (OMVPE) - SEMI-INSULATING SUBSTRATES;

D O I：

10.1016/0022-0248(88)90415-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：308 / 312

页数：5

共 10 条

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