EFFECTS OF LOW-LEVEL BORON DOPING OF THE I-LAYER ON THE PERFORMANCE OF SIC P-I-N DEVICES

被引：7

作者：

CATALANO, A

FAUGHNAN, BW

MOORE, AR

机构：

[1] RCA CORP,DAVID SARNOFF RES CTR,PRINCETON,NJ 08504

[2] UNIV DELAWARE,INST ENERGY CONVERS,NEWARK,DE 19711

来源：

SOLAR ENERGY MATERIALS | 1986年 / 13卷 / 01期

关键词：

D O I：

10.1016/0165-1633(86)90029-8

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

引用

页码：65 / 73

页数：9

共 8 条

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[2]

CATALANO A, 1982, 16TH P IEEE PHOT SPE, P1253

[3] DETERMINATION OF CARRIER COLLECTION LENGTH AND PREDICTION OF FILL FACTOR IN AMORPHOUS-SILICON SOLAR-CELLS [J].

FAUGHNAN, BW ;

CRANDALL, RS .

APPLIED PHYSICS LETTERS, 1984, 44 (05) :537-539

[4] EFFECT OF BORON DOPING AND ITS PROFILE ON CHARACTERISTICS OF P-I-N A-SI-H SOLAR-CELLS [J].

HARUKI, H ;

SAKAI, H ;

KAMIYAMA, M ;

UCHIDA, Y .

SOLAR ENERGY MATERIALS, 1983, 8 (04) :441-455

[5] MECHANISM OF THE FORMATION OF DONOR STATES IN HEAT-TREATED SILICON [J].

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FRISCH, HL ;

REISS, H .

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[6]

KUWANO Y, 1982, WORKSHOP LIGHT INDUC, P23

[7]

MOLLER M, 1982, 16TH P IEEE PHOT SPE, P1376

[8] THEORY AND EXPERIMENT ON THE SURFACE-PHOTOVOLTAGE DIFFUSION-LENGTH MEASUREMENT AS APPLIED TO AMORPHOUS-SILICON [J].

MOORE, AR .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (01) :222-228

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