STURCTURE AND CHEMISTRY OF OXIDE FILMS THERMALLY GROWN ON MOLYBDENUM SILICIDES

被引：87

作者：

BARTLETT, RW

MCCAMONT, JW

GAGE, PR

机构：

来源：

JOURNAL OF THE AMERICAN CERAMIC SOCIETY | 1965年 / 48卷 / 11期

关键词：

D O I：

10.1111/j.1151-2916.1965.tb14671.x

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：551 / +

页数：1

共 20 条

[1]

BARGMANN W, 1960, 4 INT C EL MICR, P733

[2]

BARTLETT RW, 1964, T METALL SOC AIME, V230, P1528

[3] HIGH-TEMPERATURE OXIDATION .1. A THERMAL CONDUCTIVITY METHOD FOR OXIDATION MEASUREMENTS [J].

BERKOWITZMATTUCK, JB .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (08) :908-912

[4] THE OXIDATION OF SILICON AT HIGH TEMPERATURES [J].

BRODSKY, MB ;

CUBICCIOTTI, D .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1951, 73 (07) :3497-3499

[5]

COUGHLIN JP, 1954, 542 US BUR MIN B

[6]

DARKEN LS, 1948, AM I MINING MET ENGR

[7] KINETICS OF THE OXIDATION AND NITRIDATION OF SILICON AT HIGH TEMPERATURES [J].

EVANS, JW ;

CHATTERJI, SK .

JOURNAL OF PHYSICAL CHEMISTRY, 1958, 62 (09) :1064-1067

[8]

FITZER E, 1956, 2 PLANS SEM, P56

[9]

GLASSNER A, 1953, ANL5107 REP

[10] GAS PERMEATION STUDY AND IMPERFECTION DETECTION OF THERMALLY GROWN AND DEPOSITED THIN SILICON DIOXIDE FILMS [J].

ING, SW ;

MORRISON, RE ;

SANDOR, JE .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (03) :221-226

← 1 2 →