NBN/NB JOSEPHSON JUNCTION WITH A PLASMA OXIDIZED BARRIER

被引：2

作者：

IWATA, T

TAKEI, K

IGARASHI, M

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1984年 / 23卷 / 05期

关键词：

D O I：

10.1143/JJAP.23.L327

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：L327 / L329

页数：3

相关论文

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[5] FABRICATION OF HIGH-QUALITY NBN PB JOSEPHSON TUNNEL-JUNCTIONS WITH PLASMA OXIDIZED BARRIERS
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[6] SELECTIVE NIOBIUM ANODIZATION PROCESS FOR FABRICATING JOSEPHSON TUNNEL-JUNCTIONS
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[7] BARRIER COMPOSITION AND ELECTRICAL-PROPERTIES OF HIGH-QUALITY ALL-NIOBIUM JOSEPHSON TUNNEL-JUNCTIONS
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[8] TUNNELING CHARACTERISTICS OF NBN-NBN JOSEPHSON-JUNCTIONS WITH GLOW-DISCHARGE-PRODUCED AMORPHOUS-SILICON BARRIERS
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