ELECTROABSORPTION IN ULTRANARROW-BARRIER GAAS/ALGAAS MULTIPLE-QUANTUM-WELL MODULATORS

被引：30

作者：

GOOSSEN, KW

CUNNINGHAM, JE

JAN, WY

机构：

[1] AT and T Bell Laboratories, Holmdel

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 09期

关键词：

D O I：

10.1063/1.110935

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We measure electroabsorption in GaAs/AlGaAs multiple quantum well modulators with ultranarrow barriers so as to maximize the overall absorption coefficient by removing optically inert barrier material. Reduction <38 angstrom in the width of Al0.3Ga0.7As barriers results in resonant well coupling degrading performance. For AlAs barriers, resonant coupling is eliminated and we observe sharp excitons and the quantum confined Stark effect for barriers as narrow as 10 angstrom. However, optimum normally-on operation is obtained for 20-30 angstrom AlAs barriers, approximately 20% better than 38 angstrom Al0.3Ga0.7As barriers.

引用

页码：1071 / 1073

页数：3

共 6 条

[1] QUANTUM-WELL CARRIER SWEEP OUT - RELATION TO ELECTROABSORPTION AND EXCITON SATURATION [J].