GAINAS/INP LARGE BANDWIDTH (GREATER-THAN-2 GHZ) PIN DETECTORS

被引：10

作者：

PEARSALL, TP

LOGAN, RA

BETHEA, CG

机构：

来源：

ELECTRONICS LETTERS | 1983年 / 19卷 / 16期

关键词：

D O I：

10.1049/el:19830416

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：611 / 612

页数：2

共 6 条

[1] TRIPLE SYNCHRONIZATION OF A PICOSECOND SEMICONDUCTOR-LASER WITH 2 MODE-LOCKED DYE-LASERS [J].

BETHEA, CG ;

LEVINE, BF ;

NELSON, RJ ;

VANDERZIEL, JP .

APPLIED OPTICS, 1982, 21 (08) :1345-1346

[2] OPTICAL-RESPONSE TIME OF IN0.53GA0.47AS/INP AVALANCHE PHOTO-DIODES [J].

FORREST, SR ;

KIM, OK ;

SMITH, RG .

APPLIED PHYSICS LETTERS, 1982, 41 (01) :95-98

[3] GA0.47IN0.53AS - A TERNARY SEMICONDUCTOR FOR PHOTODETECTOR APPLICATIONS [J].

PEARSALL, TP .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1980, 16 (07) :709-720

[4] A GA0.47IN0.53AS-INP HETEROPHOTODIODE WITH REDUCED DARK CURRENT [J].

PEARSALL, TP ;

PISKORSKI, M ;

BROCHET, A ;

CHEVRIER, J .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (02) :255-259

[5]

PEARSALL TP, 1981, 1980 GAAS REL COMP C, P639

[6] A PLANAR INP/INGAASP HETEROSTRUCTURE AVALANCHE PHOTO-DIODE [J].

SHIRAI, T ;

YAMAZAKI, S ;

KAWATA, H ;

NAKAJIMA, K ;

KANEDA, T .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (09) :1404-1407

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