OPTICAL STUDIES OF THE GROWTH OF SINGLE MONOLAYER WIDE INAS QUANTUM-WELLS ON GAAS BY MBE

We report here on photoluminescence (PL) and photoluminescence excitation (PLE) investigations into the direct growth by molecular beam epitaxy (MBE) of a single monolayer (ML) InAs quantum well (QW) having GaAs barriers on a GaAs substrate. Our growth temperature studies show that there is appreciable In desorption during the growth of single MLs of InAs in the temperature range 420 to 540-degrees-C. Investigations into surface segregation of In using a simple structure consisting of two coupled 1 ML wide InAs QWs reveal that this phenomenon is negligible at 420-degrees-C although significant at higher temperatures. We find that the optimum growth temperature for the growth of a 1 ML wide InAs QW is 420-degrees-C.