(INAS)3(GAAS)1 SUPERLATTICE CHANNEL FIELD-EFFECT TRANSISTOR GROWN BY MOLECULAR-BEAM EPITAXY

被引:11
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NISHIYAMA, N
YANO, H
NAKAJIMA, S
HAYASHI, H
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10.1063/1.101618
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O59 [应用物理学];
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页码:894 / 895
页数:2
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