(INAS)M(GAAS)N SUPERLATTICE GROWN BY BEAM-SEPARATION MBE METHOD

被引：10

作者：

MATSUI, Y

HAYASHI, H

KIKUCHI, K

YOSHIDA, K

机构：

来源：

SURFACE SCIENCE | 1986年 / 174卷 / 1-3期

关键词：

D O I：

10.1016/0039-6028(86)90479-6

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：600 / 605

页数：6

共 8 条

[1] (INAS)1(GAAS)1 LAYERED CRYSTAL GROWN BY MOCVD [J].

FUKUI, T ;

SAITO, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (08) :L521-L523

[2]

GRUNTHANER FJ, 1984, INT C SUPERLATTICES

[3] ULTRAUNIFORM INXGA1-XAS LAYERS ON INP GROWN BY MOLECULAR-BEAM EPITAXY [J].

MATSUI, Y ;

HAYASHI, H ;

KIKUCHI, K ;

IGUCHI, S ;

YOSHIDA, K .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02) :528-530

[4] (INAS)M(GAAS)N SUPERLATTICES GROWN BY MOLECULAR-BEAM EPITAXY [J].

MATSUI, Y ;

HAYASHI, H ;

TAKAHASHI, M ;

KIKUCHI, K ;

YOSHIDA, K .

JOURNAL OF CRYSTAL GROWTH, 1985, 71 (01) :280-282

[5] DEFECTS IN EPITAXIAL MULTILAYERS .1. MISFIT DISLOCATIONS [J].

MATTHEWS, JW ;

BLAKESLEE, AE .

JOURNAL OF CRYSTAL GROWTH, 1974, 27 (DEC) :118-125

[6] GROWTH OF GAYIN1-YAS-INP HETEROSTRUCTURES BY MOLECULAR-BEAM EPITAXY [J].

MILLER, BI ;

MCFEE, JH .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (08) :1310-1317

[7] GROWTH OF A NOVEL INAS-GAAS STRAINED LAYER SUPERLATTICE ON INP [J].

TAMARGO, MC ;

HULL, R ;

GREENE, LH ;

HAYES, JR ;

CHO, AY .

APPLIED PHYSICS LETTERS, 1985, 46 (06) :569-571

[8] A NEW HIGH-ELECTRON MOBILITY MONOLAYER SUPERLATTICE [J].

YAO, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (11) :L680-L682

← 1 →