THE CONTROL AND MODELING OF DOPING PROFILES AND TRANSIENTS IN MOVPE GROWTH

被引:52
作者
KUECH, TF
WANG, PJ
TISCHLER, MA
POTEMSKI, R
SCILLA, GJ
CARDONE, F
机构
[1] IBM, Thomas J. Watson Research Cent, United States
关键词
D O I
10.1016/0022-0248(88)90594-5
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
15
引用
收藏
页码:624 / 630
页数:7
相关论文
共 15 条
[1]  
GLEW R, 1984, J CRYSTAL GROWTH, V68, P45
[2]   PROPERTIES OF HIGH-PURITY ALXGA1-XAS GROWN BY THE METAL-ORGANIC VAPOR-PHASE-EPITAXY TECHNIQUE USING METHYL PRECURSORS [J].
KUECH, TF ;
WOLFORD, DJ ;
VEUHOFF, E ;
DELINE, V ;
MOONEY, PM ;
POTEMSKI, R ;
BRADLEY, J .
JOURNAL OF APPLIED PHYSICS, 1987, 62 (02) :632-643
[3]  
KUECH TF, UNPUB
[4]  
KUECH TF, 1987, 3RD BIENN OMVPE WORK
[5]   H2SE MEMORY EFFECTS UPON DOPING PROFILES IN GAAS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION (MO-CVD) [J].
LEWIS, CR ;
LUDOWISE, MJ ;
DIETZE, WT .
JOURNAL OF ELECTRONIC MATERIALS, 1984, 13 (03) :447-461
[6]   THE GROWTH OF MAGNESIUM-DOPED GAAS BY THE OM-VPE PROCESS [J].
LEWIS, CR ;
DIETZE, WT ;
LUDOWISE, MJ .
JOURNAL OF ELECTRONIC MATERIALS, 1983, 12 (03) :507-524
[7]   A STUDY OF ZINC DOPING IN METALLO-ORGANIC CHEMICAL VAPOR-DEPOSITION OF INP [J].
NELSON, AW ;
WESTBROOK, LD .
JOURNAL OF APPLIED PHYSICS, 1984, 55 (08) :3103-3108
[8]   SURFACE STRUCTURE AND CATALYTIC CRACKING PROPERTIES OF SIO2/BCL3, S1O2/ALME3, AND SIO2/ALCL3 SYSTEMS .1. INFRARED AND ANALYTICAL STUDIES [J].
PEGLAR, RJ ;
HAMBLETO.FH ;
HOCKEY, JA .
JOURNAL OF CATALYSIS, 1971, 20 (03) :309-&
[9]   FACTORS INFLUENCING DOPING CONTROL AND ABRUPT METALLURGICAL TRANSITIONS DURING ATMOSPHERIC-PRESSURE MOVPE GROWTH OF ALGAAS AND GAAS [J].
ROBERTS, JS ;
MASON, NJ ;
ROBINSON, M .
JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) :422-430
[10]   FLOW EFFECTS IN EPITAXIAL AUTODOPING [J].
SRINIVASAN, GR .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (09) :4824-4829