GROWTH FEATURES AND LOCAL ELECTRONIC-PROPERTIES OF SHAPED SILICON

被引：10

作者：

ABROSIMOV, NV

BAZHENOV, AV

TATARCHENKO, VA

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1987年 / 82卷 / 1-2期

关键词：

D O I：

10.1016/0022-0248(87)90187-4

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：203 / 208

页数：6

共 15 条

[1]

ABROSIMOV NV, 1985, IZV AN SSSR FIZ+, V49, P2357

[2]

ABROSIMOV NV, 1983, IZV AN SSSR FIZ+, V47, P356

[3]

ABROSIMOV NV, 1986, IZV AKAD NAUK SSS NM, V22, P181

[4]

ABROSIMOV NV, 1982, 6TH P C PROC GROWTH, V1, P272

[5] GROWTH FROM THE MELT .1. INFLUENCE OF SURFACE INTERSECTIONS IN PURE METALS [J].

BOLLING, GF ;

TILLER, WA .

JOURNAL OF APPLIED PHYSICS, 1960, 31 (08) :1345-1350

[6]

CHERNOV AA, 1980, SOVREMENNAJA KRISTAL, V3

[7] MELTING OF SILICON-CRYSTALS AND A POSSIBLE ORIGIN OF SWIRL DEFECTS [J].

CHIKAWA, J ;

SHIRAI, S .

JOURNAL OF CRYSTAL GROWTH, 1977, 39 (02) :328-340

[8] FACTORS INFLUENCING SURFACE QUALITY AND IMPURITY DISTRIBUTION IN SILICON RIBBONS GROWN BY THE CAPILLARY ACTION SHAPING TECHNIQUE (CAST) [J].

CISZEK, TF ;

SCHWUTTKE, GH ;

YANG, KH .

JOURNAL OF CRYSTAL GROWTH, 1980, 50 (01) :160-174

[9] 1ST AND 2ND ORDER TWIN BOUNDARIES IN EDGE DEFINED FILM GROWTH-SILICON RIBBON [J].

CUNNINGHAM, B ;

STRUNK, H ;

AST, DG .

APPLIED PHYSICS LETTERS, 1982, 40 (03) :237-239

[10] IMPURITY REDISTRIBUTION IN EFG [J].

KALEJS, JP .

JOURNAL OF CRYSTAL GROWTH, 1978, 44 (03) :329-344

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