PRESSURE-INDUCED SYMMETRY-BREAKING IN TETRAHEDRAL NETWORKS

被引：6

作者：

ACKLAND, GJ

机构：

[1] Department of Physics, University of Edinburgh, Edinburgh, EH9 3JZ, Mayfield Road

来源：

PHYSICAL REVIEW B | 1994年 / 50卷 / 11期

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1103/PhysRevB.50.7389

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Recent experiment and theoretical studies appear to show a great deal of complexity in the high-pressure behavior of tetrahedral semiconductors. We show that the structural stability of silicon and the order of its phase transitions is identical to that of a tetrahedrally coordinated network of rigid rods with spring-loaded joints. We further show how this parameter-free model resolves the recent controversy regarding the first high-pressure phase in silicon.

引用

页码：7389 / 7392

页数：4

共 23 条

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MCMAHON MI, 1993, PHYS REV B, V47, P13

[12] TRANSITION FROM BETA-TIN TO SIMPLE HEXAGONAL SILICON UNDER PRESSURE [J].