VISIBLE-WAVELENGTH SURFACE-EMITTING DEVICES WITH A 15-FOLD IMPROVEMENT IN ELECTRICAL-TO-OPTICAL POWER CONVERSION EFFICIENCY

被引：4

作者：

THOMAS, KJ ^{[1
]}

GUIDO, LJ ^{[1
]}

BEGGY, JC ^{[1
]}

SMITH, S ^{[1
]}

BURNHAM, RD ^{[1
]}

机构：

[1] AMOCO TECHNOL CO,NAPERVILLE,IL 60566

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 02期

关键词：

D O I：

10.1063/1.113538

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An AlxGa1-xAs p-n junction light emitting diode, with a thin In2O3 current spreading layer, on the top side, and an indirect band-gap AlAs-Al0.6Ga0.4As distributed Bragg reflector, on the bottom side, has been fabricated and characterized under continuous-wave, room-temperature operation. These relatively simple modifications yield a 15-fold increase in electrical-to-optical power conversion efficiency at λ∼675 nm, and a significant reduction in active region heating - in comparison with standard devices prepared and tested as controls. © 1995 American Institute of Physics.

引用

页码：127 / 129

页数：3

共 11 条

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