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MECHANISM OF MISFIT DISLOCATION NETWORK FORMATION IN THE HETEROEPITAXIAL SYSTEM GE-GAAS (001)

被引：33
作者：
VDOVIN, VI
MATVEEVA, LA
SEMENOVA, GN
SKOROHOD, MY
TKHORIK, YA
KHAZAN, LS
机构：
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1985年 / 92卷 / 02期
关键词：
D O I：
10.1002/pssa.2210920206
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：379 / 390
页数：12
相关论文
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    [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1979, 56 (01): : 47 - 54
  • [8] ACCOMMODATION OF MISFIT ACROSS INTERFACE TEBWEEN CRYSTALS OF SEMICONDUCTING ELEMENTS OR COMPOUNDS
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    [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (09) : 3800 - &
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    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (01): : 126 - 133
  • [10] MATTHEWS JW, 1975, EPITAXIAL GROWTH B, P559
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