REACTIVE PULSED LASER DEPOSITION OF THIN TIN FILMS

被引：37

作者：

CRACIUN, V

CRACIUN, D

BOYD, IW

机构：

[1] Electronic and Electrical Engineering, University College London, London, WC1E 7JE, Torrington Place

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1993年 / 18卷 / 02期

关键词：

D O I：

10.1016/0921-5107(93)90129-B

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Reactive pulsed laser deposition has been used to deposit thin TiN films on Si substrates. The layers were stoichiometric TiN, with very low O contamination and exhibited a smooth, featureless surface. This new method can easily be applied to the growth of other important nitrides such as ZrN, Wn, HfN or the deposition of multilayer structures such as TiN-Ti on a variety of substrates.

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页码：178 / 180

页数：3

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