TEMPERATURE-DEPENDENCE OF DC BASE AND COLLECTOR CURRENTS IN SILICON BIPOLAR-TRANSISTORS

被引：28

作者：

MARTINELLI, RU ^{[1
]}

机构：

[1] RCA LABS,PRINCETON,NJ 08540

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1976年 / 23卷 / 11期

关键词：

D O I：

10.1109/T-ED.1976.18582

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

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页码：1218 / 1224

页数：7

相关论文

共 19 条

[1] TEMPERATURE-DEPENDENCE OF BAND-GAP OF SILICON
BLUDAU, W
ONTON, A
HEINKE, W
[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (04) : 1846 - 1848
[2] INVESTIGATION OF CURRENT-GAIN TEMPERATURE DEPENDENCE IN SILICON TRANSISTORS
BUHANAN, D
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (01) : 117 - +
[3] INFLUENCE OF HEAVY DOPING ON EMITTER EFFICIENCY OF A BIPOLAR TRANSISTOR
DEMAN, HJJ
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1971, ED18 (10) : 833 - +
[4] DUBROVSKII GB, 1963, SOV PHYS-SOL STATE, V4, P2212
[5] OPTIMUM LOW-LEVEL INJECTION EFFICIENCY OF SILICON TRANSISTORS WITH SHALLOW ARSENIC EMITTERS
FAIR, RB
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (07) : 642 - 647
[6] FISTUL VI, 1969, HEAVILY DOPED SEMICO, P33
[7] A CHARGE CONTROL RELATION FOR BIPOLAR TRANSISTORS
GUMMEL, HK
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1970, 49 (01): : 115 - +
[8] GUMMEL HK, 1961, P IRE, V49, P834
[9] DIFFUSION + SOLUBILITY OF COPPER IN EXTRINSIC + INTRINSIC GERMANIUM SILICON + GALLIUM ARSENIDE
HALL, RN
RACETTE, JH
[J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (02) : 379 - &
[10] EFFECT OF EMITTER DOPING ON DEVICE CHARACTERISTICS
KANNAM, PJ
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (10) : 845 - 851