PLASMA CONDITIONS FOR THE DEPOSITION OF TIN BY BIASED ACTIVATED REACTIVE EVAPORATION AND DEPENDENCE OF THE RESISTIVITY ON PREFERRED ORIENTATION

被引：15

作者：

HAHN, BH

JUN, JH

JOO, JH

机构：

[1] Seoul Natl Univ, Seoul, South Korea, Seoul Natl Univ, Seoul, South Korea

来源：

关键词：

D O I：

10.1016/0040-6090(87)90175-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：115 / 122

页数：8

共 12 条

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[7] QUANTITATIVE ION-BEAM PROCESS FOR THE DEPOSITION OF COMPOUND THIN-FILMS
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CUOMO, JJ
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[J]. APPLIED PHYSICS LETTERS, 1983, 43 (06) : 547 - 549
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[9] PLASMA CLEANING OF METAL-SURFACES
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1974, 11 (03): : 567 - 569
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