A CHARACTERIZATION MODEL FOR CONSTANT CURRENT STRESSED VOLTAGE-TIME CHARACTERISTICS OF THIN THERMAL OXIDES GROWN ON SILICON SUBSTRATE

被引：15

作者：

CHEN, CF

WU, CY

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 60卷 / 11期

关键词：

D O I：

10.1063/1.337515

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3926 / 3944

页数：19

共 37 条

[1] CURRENT INDUCED TRAP GENERATION IN SIO2 [J].

BADIHI, A ;

EITAN, B ;

COHEN, I ;

SHAPPIR, J .

APPLIED PHYSICS LETTERS, 1982, 40 (05) :396-398

[2] DIRECT MEASUREMENT OF THE ENERGY-DISTRIBUTION OF HOT-ELECTRONS IN SILICON DIOXIDE [J].

BRORSON, SD ;

DIMARIA, DJ ;

FISCHETTI, MV ;

PESAVENTO, FL ;

SOLOMON, PM ;

DONG, DW .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) :1302-1313

[3] SI/SIO2 INTERFACE ROUGHNESS - STRUCTURAL OBSERVATIONS AND ELECTRICAL CONSEQUENCES [J].

CARIM, AH ;

BHATTACHARYYA, A .

APPLIED PHYSICS LETTERS, 1985, 46 (09) :872-874

[4]

CHEN CF, UNPUB SOLID STATE EL

[5] HOLE TRAPPING AND BREAKDOWN IN THIN SIO2 [J].

CHEN, IC ;

HOLLAND, S ;

HU, CM .

IEEE ELECTRON DEVICE LETTERS, 1986, 7 (03) :164-167

[6]

CHEN IC, 1985, IEEE T ELECTRON DEV, V32, P413, DOI 10.1109/T-ED.1985.21957

[7]

COHEN YN, 1983, J APPL PHYS, V54, P5793

[8]

COHEN YN, 1985, J APPL PHYS, V58, P2252

[9]

COHEN YN, 1984, APPL PHYS LETT, V44, P417

[10] TRAP IONIZATION BY ELECTRON-IMPACT IN AMORPHOUS SIO2-FILMS [J].

DIMARIA, DJ ;

FEIGL, FJ ;

BUTLER, SR .

APPLIED PHYSICS LETTERS, 1974, 24 (10) :459-461

← 1 2 3 4 →