EFFECT OF CHEMICAL AND ION-BEAM ETCHING ON THE ATOMIC-STRUCTURE OF INTERFACES IN YBA2CU3O7/PRBA2CU3O7 JOSEPHSON-JUNCTIONS

被引：36

作者：

JIA, CL

FALEY, MI

POPPE, U

URBAN, K

机构：

[1] Institut für Festkörperforschung, Forschungszentrum Jülich GmbH

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 24期

关键词：

D O I：

10.1063/1.115342

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The atomic structure of the interfaces of Josephson junctions formed by epitaxial YBa2Cu3O7/PrBa2Cu3O7/YBa2Cu3O7- triple-layer films was investigated by high-resolution transmission electron microscopy. The samples were fabricated by sputter deposition on surfaces which were etched ex situ either chemically, using a nonaqueous Br-ethanol solution, or by an Ar ion beam. In the interfaces produced after ion etching a thin intermediate layer with a thickness of a few nanometers was observed. The main part of this layer consists of cubic PrBa2Cu3O7 or YBa2Cu3O7 which is cation disordered. The interfaces formed during deposition on Br-ethanol-etched surfaces did not contain such an intermediate layer but exhibited high structural perfection similar to that of interfaces produced in situ. These observations permit a qualitative explanation of the difference in the electrical properties of junctions produced by these two techniques. (C) 1995 American Institute of Physics

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页码：3635 / 3637

页数：3

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