ION-BEAM SPUTTER-DEPOSITION PROCESS FOR Y1BA2CU3O7-DELTA THIN-FILM STRUCTURES

被引：7

作者：

KRUMME, JP ^{[1
]}

DOORMANN, V ^{[1
]}

WELZ, F ^{[1
]}

DOSSSEL, O ^{[1
]}

VANHAL, H ^{[1
]}

机构：

[1] PHILIPS RES LABS, NAT KUNDIG LAB, 5600 JA EINDHOVEN, NETHERLANDS

来源：

JOURNAL OF MATERIALS RESEARCH | 1994年 / 9卷 / 11期

关键词：

D O I：

10.1557/JMR.1994.2747

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Ion-beam sputter deposition (IBS) has been developed to a fully oxygen-compatible technology for growth of complex oxides, such as Y1Ba2Cu3O7-delta (YBCO) thin films. The IBS system consists of an rf-plasma ion source with molybdenum grids for sputtering, a dc-plasma electron source for space charge compensation, stoichiometric YBCO and NGO targets, a beam chopper with BaO2, Cu, and Nd blades for stoichiometry control, and an ECR-oxygen-plasma source for in situ film oxidation and photoresist removal. Due to its complexity the IBS process is fully computer-controlled, A salient feature of IBS is the excellent crystallographic and morphological properties of thin (100)/(010)- and (103)-oriented YBCO films on SrTiO3 (STO) and NdGaO3 (NGO) substrates. Sharp interfaces and good superconducting properties render this technology feasible for the fabrication of SIS-ramp-junction SQUID's.

引用

页码：2747 / 2760

页数：14

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