A FLOATING-GATE ANALOG MEMORY DEVICE FOR NEURAL NETWORKS

被引：38

作者：

FUJITA, O ^{[1
]}

AMEMIYA, Y ^{[1
]}

机构：

[1] HOKKAIDO UNIV, DEPT ELECT ENGN, SAPPORO, HOKKAIDO 060, JAPAN

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1993年 / 40卷 / 11期

关键词：

Floating gate analog memory device - Floating gate devices - Fowler-Nordheim tunnel junction;

D O I：

10.1109/16.239745

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper describes a floating-gate MOSFET device that can be used as a precision analog memory for neural network LSI'S. This device has two floating gates. One is charge-injection gate with a Fowler-Nordheim tunnel junction, and the other is a charge-storage gate that operates as a MOSFET floating gate. The gates are connected by high resistance, and the charge-injection gate is small so that its capacitance is much less than that of the charge-storage gate. By applying control pulses to the charge-injection gate, it is possible to charge and discharge the MOSFET floating gate in order to modify the MOSFET current with high resolution over 10-bits. The charge injection can be carried out without much disturbing the MOSFET output current with high voltage control pulses. This device is useful for on-chip learning in analog neural network LSI's.

引用

页码：2029 / 2055

页数：27

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