INTERFACE INVESTIGATION USING TRANSPARENT CONDUCTOR-OXIDE-SILICON STRUCTURES

被引：7

作者：

KAR, S

VARMA, S

SARASWAT, P

ASHOK, S

机构：

[1] INDIAN INST TECHNOL,ADV CTR MAT SCI,KANPUR 208016,UTTAR PRADESH,INDIA

[2] PENN STATE UNIV,DEPT ENGN SCI & MECH,UNIVERSITY PK,PA 16802

来源：

JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 10期

关键词：

D O I：

10.1063/1.330004

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：7039 / 7043

页数：5

共 10 条

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[2]

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[3] ON THE MECHANISM OF DEGRADATION IN SI/SIOX/AG METAL-OXIDE SEMICONDUCTOR SOLAR-CELLS [J].

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JOURNAL OF APPLIED PHYSICS, 1982, 53 (06) :4435-4440

[4]

KAR S, UNPUB

[5]

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[6] WORK FUNCTION OF IN2O3 FILM AS DETERMINED FROM INTERNAL PHOTOEMISSION [J].

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[7] ADMITTANCE MEASUREMENTS OF SI-SIO2 INTERFACE STATES UNDER OPTICAL ILLUMINATION [J].

POON, TC ;

CARD, HC .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (11) :5880-5888

[8] ENERGY AND ELECTRIC-FIELD DEPENDENCE OF SI-SIO2 INTERFACE STATE PARAMETERS BY OPTICALLY ACTIVATED ADMITTANCE EXPERIMENTS [J].

POON, TC ;

CARD, HC .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (12) :6273-6278

[9] NEW AND UNIFIED MODEL FOR SCHOTTKY-BARRIER AND III-V INSULATOR INTERFACE STATES FORMATION [J].

SPICER, WE ;

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SU, CY ;

LINDAU, I .

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[10]

Vossen J. L., 1977, PHYS THIN FILMS, V9, P1

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