SiO2/poly-Si multilayered electron beam resist process for fabrication of ultrasmall tunnel junctions

被引：14

作者：

Wada, T ^{[1
]}

Hirayama, M ^{[1
]}

Haraichi, S ^{[1
]}

Ishii, K ^{[1
]}

Hiroshima, H ^{[1
]}

Komuro, M ^{[1
]}

机构：

[1] TOKAI UNIV, HIRATSUKA, KANAGAWA 25912, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1995年 / 34卷 / 12B期

关键词：

MIM tunnel juction; Coulomb staircase; EB lithography; SIO2/poly-Si EB resist;

D O I：

10.1143/JJAP.34.6961

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have developed an SiO2/poly-Si multilayered electron beam resist process in order to overcome the resolution limit in conventional polymer electron beam resists and to form suspended masks for ultrasmall metal-insulator-meta1 tunnel junction fabrication. Using a solution of buffered HF and a mixed solution of HNO3 and HF as etching solutions for SiO2 and poly-Si, respectively, suspended masks for metal depositions were produced. Utilizing a multiple-angle deposition-oxidation-deposition method, we have realized an ultrasmall Al/Ai(2)O(3)/Al tunnel junction array which exhibits a clear Coulomb staircase in the current-voltage characteristics at 12 K.

引用

页码：6961 / 6965

页数：5

共 20 条

[1] DIRECT NANOMETER SCALE PATTERNING OF SIO2 WITH ELECTRON-BEAM IRRADIATION THROUGH A SACRIFICIAL LAYER [J].