INVESTIGATIONS OF GROWTH DEFECTS IN SOLUTION-GROWN GAXIN1-XP WITH A SEM OPERATING IN CATHODOLUMINESCENCE MODE

被引：13

作者：

VOIGT, G ^{[1
]}

RAIDT, H ^{[1
]}

PEIBST, H ^{[1
]}

MENNIGER, H ^{[1
]}

HILDISCH, L ^{[1
]}

机构：

[1] DAWB,ZENT INST ELECKTR PHYS,ABT KRISTALLWACHSTUM & REALSTRUKT,DDR-108 BERLIN,GER DEM REP

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1976年 / 36卷 / 01期

关键词：

D O I：

10.1002/pssa.2210360118

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：173 / 179

页数：7

共 14 条

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[5] CRYSTAL SYNTHESIS, ELECTRICAL PROPERTIES, AND SPONTANEOUS AND STIMULATED PHOTOLUMINESCENCE OF IN1-XGAXP-N GROWN FROM SOLUTION [J].

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[6]

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[7] ELECTRONIC STRUCTURE AND LUMINESCENCE PROCESSES IN IN1-XGAXP ALLOYS [J].

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[8]

RAIDT H, TO BE PUBLISHED

[9]

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[10] CALCULATION OF GA-IN-P TERNARY PHASE DIAGRAM USING QUASI-CHEMICAL EQUILIBRIUM MODEL [J].

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