LASER ANNEALING OF THE SI-AU INTERFACE

被引：1

作者：

CROS, A

MARFAING, J

SALVAN, F

DERRIEN, J

KERHERVE, F

机构：

[1] UNIV HAUTE ALSACE,INST SCI EXACTES & APPL,F-68093 MULHOUSE,FRANCE

[2] ECOLE NORMALE SUPER,PHYS SOLIDES GRP,F-75221 PARIS,FRANCE

来源：

THIN SOLID FILMS | 1983年 / 100卷 / 01期

关键词：

D O I：

10.1016/0040-6090(83)90225-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：17 / 24

页数：8

共 13 条

[1]

BRAICOVITCH L, 1980, PHYS REV B, V20, P5131

[2] FORMATION, STRUCTURE, AND ORIENTATION OF GOLD SILICIDE ON GOLD SURFACES [J].

GREEN, AK ;

BAUER, E .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (04) :1284-1291

[3] OPTICAL AND ELECTRON EMISSIONS OF INTENSELY ILLUMINATED SOLIDS [J].

HAUCHECORNE, G ;

BOISSEL, P ;

KERHERVE, F ;

MAYER, G .

OPTICS COMMUNICATIONS, 1979, 30 (03) :429-436

[4]

HIRAKI A, 1974, JAPAN J APPL PHY S 2, V2, P749

[5] ISOTHERMAL DESORPTION SPECTROSCOPY FOR STUDY OF 2-DIMENSIONAL CONDENSED PHASES - INVESTIGATION OF AU (DEPOSIT)-SI(111) (SUBSTRATE) SYSTEM - APPLICATION TO XE-(0001)GRAPHITE SYSTEM [J].

LELAY, G ;

MANNEVILLE, M ;

KERN, R .

SURFACE SCIENCE, 1977, 65 (01) :261-276

[6] COMPOUNDS IN THE PD-SI AND PT-SI SYSTEM OBTAINED BY ELECTRON-BOMBARDMENT AND POST-THERMAL ANNEALING [J].

MAJNI, G ;

NAVA, F ;

OTTAVIANI, G ;

DANNA, E ;

LEGGIERI, G ;

LUCHES, A ;

CELOTTI, G .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (06) :4055-4061

[7]

MARFAING J, 1978, THESIS U MARSEILLE

[8] ELECTRICAL-RESISTIVITY OF QUENCHED CONDENSED SI-AU FILMS [J].

MOCKEL, D ;

BAUMANN, F .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1980, 57 (02) :585-590

[9]

MOUTTET C, 1981, SURF SCI, V111, pL755, DOI 10.1016/0039-6028(81)90393-9

[10]

SALVAN F, 1980, J PHYS LETT-PARIS, V41, pL337, DOI 10.1051/jphyslet:019800041014033700

← 1 2 →