INDUCED ABSORPTION SPECTROSCOPIC DETERMINATION OF EXCITON BINDING-ENERGIES IN TYPE-II GAAS ALAS SUPERLATTICES

被引:16
作者
HODGE, CC
PHILLIPS, CC
SKOLNICK, MS
SMITH, GW
WHITEHOUSE, CR
DAWSON, P
FOXON, CT
机构
[1] ROYAL SIGNALS & RADAR ESTAB,MALVERN WR14 3PS,WORCS,ENGLAND
[2] PHILIPS RES LABS,REDHILL RH1 5HA,SURREY,ENGLAND
来源
PHYSICAL REVIEW B | 1990年 / 41卷 / 17期
关键词
D O I
10.1103/PhysRevB.41.12319
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The binding energies of magnetoexcitons in a range of GaAs/AlAs type-II superlattices have been measured directly for the first time, using a novel induced far-infrared absorption technique. Zero-field binding energies in the range 13.2 17.4 meV are found, and these are in excellent agreement with recently published variational calculations. Good fits to the experimental data in the range B=0 8 T are obtained with a modified quasi-two-dimensional magnetoexciton theory, allowing exciton dimensionality parameters to be determined. © 1990 The American Physical Society.
引用
收藏
页码:12319 / 12322
页数:4
相关论文
共 25 条
[1]   INTERBAND OPTICAL TRANSITIONS IN EXTREMELY ANISOTROPIC SEMICONDUCTORS .2. COEXISTENCE OF EXCITON AND LANDAU LEVELS [J].
AKIMOTO, O ;
HASEGAWA, H .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1967, 22 (01) :181-&
[2]   COMMENTS ON THE IDENTIFICATION OF HIGH-ORDER SPECTRAL-LINES OF DONORS IN SEMICONDUCTORS IN INTERMEDIATE MAGNETIC-FIELDS [J].
ARMISTEAD, CJ ;
STRADLING, RA ;
WASILEWSKI, Z .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1989, 4 (07) :557-564
[3]   UNAMBIGUOUS OBSERVATION OF THE 2S STATE OF THE LIGHT-HOLE AND HEAVY-HOLE EXCITONS IN GAAS-(ALGA) AS MULTIPLE-QUANTUM-WELL STRUCTURES [J].
DAWSON, P ;
MOORE, KJ ;
DUGGAN, G ;
RALPH, HI ;
FOXON, CTB .
PHYSICAL REVIEW B, 1986, 34 (08) :6007-6010
[4]   NATURE OF THE LOWEST CONFINED ELECTRON STATE IN GAAS ALAS TYPE-II QUANTUM-WELLS AS A FUNCTION OF ALAS THICKNESS [J].
DAWSON, P ;
FOXON, CT ;
VANKESTEREN, HW .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1990, 5 (01) :54-59
[5]   PHOTOLUMINESCENCE DECAY TIME STUDIES OF TYPE-II GAAS/ALAS QUANTUM-WELL STRUCTURES [J].
DAWSON, P ;
MOORE, KJ ;
FOXON, CT ;
THOOFT, GW ;
VANHAL, RPM .
JOURNAL OF APPLIED PHYSICS, 1989, 65 (09) :3606-3609
[6]  
DAWSON P, 1989, SPIE C P, V943, P145
[7]   EXCITON BINDING-ENERGY IN TYPE-II GAAS-(AL,GA) AS QUANTUM-WELL HETEROSTRUCTURES [J].
DUGGAN, G ;
RALPH, HI .
PHYSICAL REVIEW B, 1987, 35 (08) :4152-4154
[8]   X-POINT EXCITONS IN AIAS/GAAS SUPERLATTICES [J].
FINKMAN, E ;
STURGE, MD ;
TAMARGO, MC .
APPLIED PHYSICS LETTERS, 1986, 49 (19) :1299-1301
[9]   EFFECTS OF THE LAYER THICKNESS ON THE ELECTRONIC CHARACTER IN GAAS-ALAS SUPERLATTICES [J].
IHM, J .
APPLIED PHYSICS LETTERS, 1987, 50 (16) :1068-1070
[10]   INFRARED STUDY OF SHALLOW ACCEPTOR STATES IN GAAS [J].
KIRKMAN, RF ;
STRADLING, RA ;
LINCHUNG, PJ .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1978, 11 (02) :419-433