ELECTRON-EXCITATION DURING ANODIC DECOMPOSITION OF III-V COMPOUNDS INDUCED BY HOLE INJECTING SPECIES (CE-4+)

被引:15
作者
ETCHEBERRY, A
GAUTRON, J
KHOUMRI, EM
SCULFORT, JL
机构
关键词
D O I
10.1016/0022-0728(90)87388-Z
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
Evidence is presented for electron excitation steps during the anodic decomposition of III-V compounds induced by hole injecting species such as Ce4+. Their number depends on the nature of the compound. Thus, the behaviour of GaAs on the one hand and phosphorus containing compounds on the other are quite different. The nature of the decomposition intermediates connected with the existence of the electron excitation steps is related to the phosphorus induced gap states. © 1990.
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页码:177 / 186
页数:10
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