THIN-FILM ADHESION MODIFICATION BY MEV ION-BEAMS - A MODEL BASED ON ION TRACK CONCEPTS

被引：4

作者：

SUGDEN, S

SOFIELD, CJ

MURRELL, MP

机构：

[1] Nuclear Physics and Instrumentation Division, Hclrwell Laboratory, Didcot,Oxon, 1234 West 999th Street, Washington, east

来源：

RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1990年 / 115卷 / 1-3期

关键词：

ADHESION; RADIATION; IONIZATION; MODELING; ADSORBATES;

D O I：

10.1080/10420159008220556

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

A semi-empirical model, based on concepts used to explain the process of track formation in insulators, has been applied to the experimental observation of improved film adhesion produced by MeV ion irradiation. Good agreement is obtained with experimental data for the system of gold film on native oxides of tantalum. The model uses a single free parameter, e()which represents the threshold energy density for the process responsible for the improved bonding. The significance of this parameter is discussed in terms of possible ionisation induced interface phenomena. © 1990, Taylor & Francis Group, LLC. All rights reserved.

引用

页码：79 / 81

页数：3

共 11 条

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