INTERFACE OXIDATION OF EPITAXIAL SILICON DEPOSITS ON (100) YTTRIA STABILIZED CUBIC ZIRCONIA

被引：11

作者：

PRIBAT, D ^{[1
]}

MERCANDALLI, LM ^{[1
]}

SIEJKA, J ^{[1
]}

PERRIERE, J ^{[1
]}

机构：

[1] ECOLE NORMALE SUPER,PHYS SOLIDES GRP,F-75221 PARIS 05,FRANCE

来源：

关键词：

D O I：

10.1063/1.335678

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：313 / 320

页数：8

共 30 条

[1] CROSS-SECTIONAL ELECTRON-MICROSCOPY OF SILICON ON SAPPHIRE
ABRAHAMS, MS
BUIOCCHI, CJ
[J]. APPLIED PHYSICS LETTERS, 1975, 27 (06) : 325 - 327
[2] EARLY GROWTH OF SILICON ON SAPPHIRE .1. TRANSMISSION ELECTRON MICROSOPY
ABRAHAMS, MS
BUIOCCHI, CJ
SMITH, RT
CORBOY, JF
BLANC, J
CULLEN, GW
[J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (12) : 5139 - 5150
[3] MONTE CARLO CHANNELING CALCULATIONS
BARRETT, JH
[J]. PHYSICAL REVIEW B, 1971, 3 (05): : 1527 - &
[4] OPTICAL AND ELECTRICAL-PROPERTIES OF YTTRIA STABILIZED ZIRCONIA (YSZ) CRYSTALS
BUCHANAN, RC
POPE, S
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (04) : 962 - 966
[5] CROSET M, 1983, Patent No. 2542500
[6] DUPUY M, 1984, J MICROSC SPECT ELEC, V9, P163
[7] DUPUY M, 1984, LETICRMMDMC8419 REP
[8] RUTHERFORD BACKSCATTERING AND CHANNELING ANALYSIS OF EPITAXIAL, LOW-MASS FILMS ON HIGH-MASS SUBSTRATES
GOLECKI, I
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 218 (1-3): : 63 - 66
[9] HETEROEPITAXIAL SI FILMS ON YTTRIA-STABILIZED, CUBIC ZIRCONIA SUBSTRATES
GOLECKI, I
MANASEVIT, HM
MOUDY, LA
YANG, JJ
MEE, JE
[J]. APPLIED PHYSICS LETTERS, 1983, 42 (06) : 501 - 503
[10] GOLECKI I, 1984 P S COMP THIN F