PECVD SILICON-OXIDES AS STUDIED BY XPS, RBS, ERDA, IRS AND ESR

被引：9

作者：

ERMOLIEFF, A

SINDZINGRE, T

MARTHON, S

MARTIN, P

PIERRE, F

PECCOUD, L

机构：

[1] LETI (CEA-Technologies Avancées), DOPT-CEN / G-85 X

来源：

APPLIED SURFACE SCIENCE | 1993年 / 64卷 / 03期

关键词：

D O I：

10.1016/0169-4332(93)90023-5

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

SiO2 thin films were obtained by microwave plasma-enhanced chemical vapour deposition. Plasmas with two different gas mixtures were studied: Ar/O2/SiH4 and O2/SiH4, the gas ratio R = O2/SiH4 varying from 0.5 to 10 with two radio frequency (RF) bias powers (0 and 100 W). Seventeen dielectric layers with a thickness around 500 nm were studied to determine their chemical composition by X-ray photoelectron spectroscopy (XPS) and valence-band studies, Rutherford backscattering spectroscopy (RBS) and elastic recoil detection analysis (ERDA), infrared spectroscopy (IRS) and electronic spin resonance (ESR). These samples could then be classified into three groups corresponding to different SiOH and SiH or only SiOH concentrations. Their stoichiometries were also determined. An explanation of the valence-band shift and its modifications is proposed.

引用

页码：175 / 183

页数：9

共 26 条

[1]

ADAMS AC, 1983, SOLID STATE TECHNOL, V26, P135

[2]

BECKMAN KH, 1978, J ELECTROCHEM SOC, V125, P819

[3] ULTRAVIOLET PHOTOELECTRON SPECTROSCOPIC STUDY OF THE SURFACE ETCHING OF AIR-OXIDIZED HYDROGENATED AMORPHOUS-SILICON BY AQUEOUS HYDROFLUORIC-ACID SOLUTION [J].