INFRARED-SPECTROSCOPY OF THE NEUTRAL ZINC DOUBLE-ACCEPTOR IN SILICON

被引:10
作者
MERK, E [1 ]
HEYMAN, J [1 ]
HALLER, EE [1 ]
机构
[1] UNIV CALIF BERKELEY,BERKELEY,CA 94720
关键词
D O I
10.1016/0038-1098(89)90412-2
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:851 / 854
页数:4
相关论文
共 14 条
[1]   EFFECTIVE MASS-LIKE STATES OF THE DEEP ACCEPTOR LEVEL OF AU AND PT IN SILICON [J].
ARMELLES, G ;
BARRAU, J ;
BROUSSEAU, M ;
PAJOT, B ;
NAUD, C .
SOLID STATE COMMUNICATIONS, 1985, 56 (03) :303-305
[2]   CUBIC CONTRIBUTIONS TO SPHERICAL MODEL OF SHALLOW ACCEPTOR STATES [J].
BALDERES.A ;
LIPARI, NO .
PHYSICAL REVIEW B, 1974, 9 (04) :1525-1539
[3]   PREDICTION OF LINE-INTENSITIES AND INTERPRETATION OF ACCEPTOR SPECTRA IN SEMICONDUCTORS [J].
BINGGELI, N ;
BALDERESCHI, A .
SOLID STATE COMMUNICATIONS, 1988, 66 (04) :323-328
[4]   IRRADIATION DAMAGE IN N-TYPE GERMANIUM AT 4.2 DEGREES K [J].
CALLCOTT, TA ;
MACKAY, JW .
PHYSICAL REVIEW, 1967, 161 (03) :698-+
[5]   DOUBLE-ACCEPTOR BEHAVIOR OF ZINC IN SILICON [J].
CARLSON, RO .
PHYSICAL REVIEW, 1957, 108 (06) :1390-1393
[6]   STUDY OF BERYLLIUM AND BERYLLIUM-LITHIUM COMPLEXES IN SINGLE-CRYSTAL SILICON [J].
CROUCH, RK ;
ROBERTSO.JB ;
GILMER, TE .
PHYSICAL REVIEW B, 1972, 5 (08) :3111-&
[7]   DIFFUSION AND ELECTRICAL BEHAVIOR OF ZINC IN SILICON [J].
FULLER, CS ;
MORIN, FJ .
PHYSICAL REVIEW, 1957, 105 (02) :379-383
[8]   THERMAL IONIZATION RATES AND ENERGIES OF HOLES AT DOUBLE ACCEPTOR ZINC CENTERS IN SILICON [J].
HERMAN, JM ;
SAH, CT .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1972, 14 (02) :405-415
[9]  
HEYMAN J, 1989, B AM PHYS SOC, P34
[10]  
JANZEN EJ, 1984, PHYS REV B, V29, P190