FOCUSED HIGH-ENERGY HEAVY-ION BEAMS

被引:12
作者
HORINO, Y [1 ]
CHAYAHARA, A [1 ]
KIUCHI, M [1 ]
FUJII, K [1 ]
SATOU, M [1 ]
FUJIMOTO, F [1 ]
机构
[1] OSAKA UNIV,INST SCI & IND RES,IBARAKI,OSAKA 567,JAPAN
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1990年 / 29卷 / 06期
关键词
Focused ion beam; Ion microprobe; Mev ion beam; Mev ion implantation; Rbs;
D O I
10.1143/JJAP.29.1230
中图分类号
O59 [应用物理学];
学科分类号
摘要
A focused ion beam line of MeV heavy ions has been developed by combining a focusing system consisting of objective slits and a magnetic quadrupole doublet to the beam line of a tand em-type accelerator. The demagnification factors of this system were determined to be 1/3.4 for the horizontal direction and 1/14 for the vertical direction, and a minimum beam spot size of 5.6 µm×8.0 µm was achieved. This system allows us ion beam processes such as maskless MeV ion implantation and ion beam microanalysis using heavy ions. © 1990 The Japan Society of Applied Physics.
引用
收藏
页码:1230 / 1233
页数:4
相关论文
共 17 条
  • [1] A MONTE-CARLO COMPUTER-PROGRAM FOR THE TRANSPORT OF ENERGETIC IONS IN AMORPHOUS TARGETS
    BIERSACK, JP
    HAGGMARK, LG
    [J]. NUCLEAR INSTRUMENTS & METHODS, 1980, 174 (1-2): : 257 - 269
  • [2] CHAYAHARA A, 1989, 5TH P S SURF LAY MOD, P161
  • [3] KIUCHI M, 1989, 5TH P S SURF LAY MOD, P157
  • [4] THE HEIDELBERG PROTON MICRO-PROBE
    KNEIS, H
    MARTIN, B
    NOBILING, R
    POVH, B
    TRAXEL, K
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1982, 197 (01): : 79 - 83
  • [5] PROTON AND NUCLEAR MICRO-PROBE DEVELOPMENTS
    LEGGE, GJF
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1982, 197 (01): : 243 - 253
  • [6] HIGH-RESOLUTION FOCUSED ION-BEAM LITHOGRAPHY
    MATSUI, S
    KOJIMA, Y
    OCHIAI, Y
    [J]. APPLIED PHYSICS LETTERS, 1988, 53 (10) : 868 - 870
  • [7] INSITU SELF ION-BEAM ANNEALING OF DAMAGE IN SI DURING HIGH-ENERGY (0.53 MEV-2.56 MEV) AS+ ION-IMPLANTATION
    NAKATA, J
    TAKAHASHI, M
    KAJIYAMA, K
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (11) : 2211 - 2221
  • [8] NOVEL LOW-TEMPERATURE RECRYSTALLIZATION OF AMORPHOUS-SILICON BY HIGH-ENERGY ION-BEAM
    NAKATA, J
    KAJIYAMA, K
    [J]. APPLIED PHYSICS LETTERS, 1982, 40 (08) : 686 - 688
  • [9] NAMBA S, 1989, 6TH P INT C ION BEAM
  • [10] NOBILING R, 1978, NUCL INSTRUM METHODS, V149, P663