HIGH-RESOLUTION FOCUSED ION-BEAM LITHOGRAPHY

被引：31

作者：

MATSUI, S

KOJIMA, Y

OCHIAI, Y

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 10期

关键词：

D O I：

10.1063/1.100098

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：868 / 870

页数：3

共 9 条

[1] HIGH-CURRENT DENSITY GA+ IMPLANTATIONS INTO SI
HART, RR
ANDERSON, CL
DUNLAP, HL
SELIGER, RL
WANG, V
[J]. APPLIED PHYSICS LETTERS, 1979, 35 (11) : 865 - 867
[2] ION-BEAM EXPOSURE PROFILES IN PMMA-COMPUTER SIMULATION
KARAPIPERIS, L
ADESIDA, I
LEE, CA
WOLF, ED
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (04): : 1259 - 1263
[3] HIGH-RESOLUTION SPUTTERING USING A FOCUSED ION-BEAM
KUBENA, RL
SELIGER, RL
STEVENS, EH
[J]. THIN SOLID FILMS, 1982, 92 (1-2) : 165 - 169
[4] CHARACTERIZATION OF A HIGH-RESOLUTION NOVOLAK BASED NEGATIVE ELECTRON-BEAM RESIST WITH 4-MU-C/CM2 SENSITIVITY
LIU, HY
DEGRANDPRE, MP
FEELY, WE
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (01): : 379 - 383
[5] ION SPECIES DEPENDENCE OF FOCUSED-ION-BEAM LITHOGRAPHY
MATSUI, S
MORI, K
SHIOKAWA, T
TOYODA, K
NAMBA, S
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (04): : 853 - 857
[6] LITHOGRAPHIC APPROACH FOR 100-NM FABRICATION BY FOCUSED ION-BEAM
MATSUI, S
MORI, K
SAIGO, K
SHIOKAWA, T
TOYODA, K
NAMBA, S
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (04): : 845 - 849
[7] DIRECT WRITING THROUGH RESIST EXPOSURE USING A FOCUSED ION-BEAM SYSTEM
OCHIAI, Y
KOJIMA, Y
MATSUI, S
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (04): : 1055 - 1061
[8] ION-BEAM SENSITIVITY OF POLYMER RESISTS
RYSSEL, H
HABERGER, K
KRANZ, H
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (04): : 1358 - 1362
[9] HIGH-RESOLUTION, ION-BEAM PROCESSES FOR MICROSTRUCTURE FABRICATION
SELIGER, RL
KUBENA, RL
OLNEY, RD
WARD, JW
WANG, V
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (06): : 1610 - 1612

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