DIRECT WRITING THROUGH RESIST EXPOSURE USING A FOCUSED ION-BEAM SYSTEM

被引：9

作者：

OCHIAI, Y

KOJIMA, Y

MATSUI, S

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 04期

关键词：

D O I：

10.1116/1.584297

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1055 / 1061

页数：7

共 23 条

[1] ION-BEAM LITHOGRAPHY AT NANOMETER DIMENSIONS
ADESIDA, I
KRATSCHMER, E
WOLF, ED
MURAY, A
ISAACSON, M
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (01): : 45 - 49
[2] BROWN WL, 1981, SOLID STATE TECHNOL, V24, P60
[3] DAVIS DE, 1977, IBM J RES DEV, V21, P498, DOI 10.1147/rd.216.0498
[4] FOCUSED GA+ BEAM DIRECT IMPLANTATION FOR SI DEVICE FABRICATION
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CORELLI, JC
STECKL, AJ
BERRY, IL
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (01): : 91 - 93
[5] INTEGRATED-CIRCUIT REPAIR USING FOCUSED ION-BEAM MILLING
HARRIOTT, LR
WAGNER, A
FRITZ, F
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (01): : 181 - 184
[6] MICROMACHINING OF OPTICAL STRUCTURES WITH FOCUSED ION-BEAMS
HARRIOTT, LR
SCOTTI, RE
CUMMINGS, KD
AMBROSE, AF
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (01): : 207 - 210
[7] APPLICATION OF A FOCUSED ION-BEAM SYSTEM TO DEFECT REPAIR OF VLSI MASKS
HEARD, PJ
CLEAVER, JRA
AHMED, H
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (01): : 87 - 90
[8] EFFECT OF RECOIL ATOMS ON RESOLUTION IN ION-BEAM LITHOGRAPHY
KARAPIPERIS, L
DIEUMEGARD, D
ADESIDA, I
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 209 (MAY): : 165 - 171
[9] SUB-MICRON PATTERN FABRICATION BY FOCUSED ION-BEAMS
KATO, T
MORIMOTO, H
SAITOH, K
NAKATA, H
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (01): : 50 - 53
[10] ION-BEAM EXPOSURE OF RESIST MATERIALS
KOMURO, M
ATODA, N
KAWAKATSU, H
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (03) : 483 - 490

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