EFFECT OF RECOIL ATOMS ON RESOLUTION IN ION-BEAM LITHOGRAPHY

被引：15

作者：

KARAPIPERIS, L ^{[1
]}

DIEUMEGARD, D ^{[1
]}

ADESIDA, I ^{[1
]}

机构：

[1] CORNELL UNIV,NATL RES & RESOURCE FACIL SUBMICRON STRUCT,ITHACA,NY 14853

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH | 1983年 / 209卷 / MAY期

关键词：

D O I：

10.1016/0167-5087(83)90795-0

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：165 / 171

页数：7

共 15 条

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[2]

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[8] 400-A HIGH ASPECT-RATIO LINES PRODUCED IN POLYMETHYL METHACRYLATE (PMMA) BY ION-BEAM EXPOSURE [J].

KARAPIPERIS, L ;

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[9] ION-BEAM EXPOSURE PROFILES IN PMMA-COMPUTER SIMULATION [J].

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LEE, CA ;

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[10]

KARAPIPERIS L, 1982, THESIS CORNELL U

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