ADSORPTION OF SB ON GE(110) STUDIED BY PHOTOEMISSION AND SCANNING TUNNELING MICROSCOPY

The Ge(110) surface shows two possible reconstructions: the "16 structure" and the c (8 X 10). The adsorption of Sb on these surfaces at elevated substrate temperatures shows saturation behaviors. At 200-degrees-C, the Sb saturation occurs at one-monolayer (ML) coverage, and the resulting surface exhibits a (1 X 1) diffraction pattern. Photoemission studies of the core levels suggest that this (1 X 1) surface is close to being an ideal Sb-terminated surface. This is consistent with direct observations by scanning tunneling microscopy (STM). At a higher substrate temperature of 400-degrees-C, Sb saturation of the surface results in a (3 X 2) diffraction pattern. An Sb coverage of 2/3 ML on this surface is determined from core-level-photoemission and Auger results. STM images for these surfaces are presented and discussed.