TIME-RESOLVED ANNEALING OF INTERFACE TRAPS AT THE SILICON OXIDE-SILICON INTERFACE

被引：11

作者：

BURTE, EP ^{[1
]}

机构：

[1] SEMIKRON RES & DEV LAB,D-8500 NUERNBERG,FED REP GER

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 10期

关键词：

D O I：

10.1063/1.342453

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5013 / 5019

页数：7

共 16 条

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[7] DIFFUSION OF RADIOLYTIC MOLECULAR-HYDROGEN AS A MECHANISM FOR THE POST-IRRADIATION BUILDUP OF INTERFACE STATES IN SIO2-ON-SI STRUCTURES [J].

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[9]

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[10]

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