DISLOCATION PROPAGATION AND EMITTER EDGE DEFECTS IN SILICON WAFERS

[1] DIFFUSION PIPES IN SILICON NPN STRUCTURES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (02) : 304 - &

[2] BARSON F, 1975, ELECTROCHEM SOC M TO

[3] TEMPERATURE DISTRIBUTION AND STRESSES IN CIRCULAR WAFERS IN A ROW DURING RADIATIVE COOLING [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (11) : 4413 - +

[4] INDENTATION DISLOCATION ROSETTES IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (04) : 1470 - 1472

[5] DISLOCATIONS IN THERMALLY STRESSED SILICON WAFERS [J]. APPLIED PHYSICS LETTERS, 1973, 22 (05) : 261 - 264

[6] HU SM, 1975, J APPL PHYS, V46, P1465, DOI 10.1063/1.321796

[7] MOREZANE K, 1969, J APPL PHYS, V40, P4104

[8] INFLUENCE OF DISLOCATIONS ON PROPERTIES OF SHALLOW DIFFUSED TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (04) : 394 - +

[9] POPONIAK MR, 1973, SEMICONDUCTOR SILICO, P701

[10] SETO DK, 1973, SEMICONDUCTOR SILICO, P651

[1] DIFFUSION PIPES IN SILICON NPN STRUCTURES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (02) : 304 - &

[2] BARSON F, 1975, ELECTROCHEM SOC M TO

[3] TEMPERATURE DISTRIBUTION AND STRESSES IN CIRCULAR WAFERS IN A ROW DURING RADIATIVE COOLING [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (11) : 4413 - +

[4] INDENTATION DISLOCATION ROSETTES IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (04) : 1470 - 1472

[5] DISLOCATIONS IN THERMALLY STRESSED SILICON WAFERS [J]. APPLIED PHYSICS LETTERS, 1973, 22 (05) : 261 - 264

[6] HU SM, 1975, J APPL PHYS, V46, P1465, DOI 10.1063/1.321796

[7] MOREZANE K, 1969, J APPL PHYS, V40, P4104

[8] INFLUENCE OF DISLOCATIONS ON PROPERTIES OF SHALLOW DIFFUSED TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (04) : 394 - +

[9] POPONIAK MR, 1973, SEMICONDUCTOR SILICO, P701

[10] SETO DK, 1973, SEMICONDUCTOR SILICO, P651