PRECIPITATES IN YBA2CU3O7-DELTA THIN-FILMS ANNEALED AT LOW-OXYGEN PARTIAL-PRESSURE

被引：10

作者：

HOU, SY ^{[1
]}

PHILLIPS, JM ^{[1
]}

WERDER, DJ ^{[1
]}

TIEFEL, TH ^{[1
]}

FLEMING, RM ^{[1
]}

MARSHALL, JH ^{[1
]}

SIEGAL, MP ^{[1
]}

机构：

[1] SANDIA NATL LABS,ALBUQUERQUE,NM 87185

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 24期

关键词：

D O I：

10.1063/1.109624

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have studied the precipitates in YBa2Cu3O7-delta(YBCO) thin films grown by the BaF2 process in p(O2)= 4 Torr and 700-degrees-C. While stoichiometric films result in BaCuO2 surface precipitates, we have found Y2Cu2O5 precipitates embedded in the matrix of the same film. Off stoichiometric films with Ba/Y < 1.5 have a precipitate-free surface but with higher abundance of Y2Cu2O5 in the film matrix. The estimated densities of the two precipitates favor a stoichiometric YBCO film matrix. This behavior is not explainable in terms of phase equilibria and is attributed to kinetic effects. The electrical properties of the films degrade as the Ba/Y ratio deviates from 2.00.

引用

页码：3201 / 3203

页数：3

共 13 条

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