ADVANCED BIPOLAR-TRANSISTOR MODELING - PROCESS AND DEVICE SIMULATION TOOLS FOR TODAYS TECHNOLOGY

被引：18

作者：

KNEPPER, RW ^{[1
]}

GAUR, SP ^{[1
]}

CHANG, FY ^{[1
]}

SRINIVASAN, GR ^{[1
]}

机构：

[1] IBM CORP, E FISHKILL FACIL, DIV GEN TECHNOL, DEPT COMP AIDED DEVICE DESIGN, HOPEWELL JUNCTION, NY 12533 USA

来源：

IBM JOURNAL OF RESEARCH AND DEVELOPMENT | 1985年 / 29卷 / 03期

关键词：

D O I：

10.1147/rd.293.0218

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

引用

页码：218 / 228

页数：11

共 18 条

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[3]

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[4] THE GENERATION OF 3-DIMENSIONAL BIPOLAR-TRANSISTOR MODELS FOR CIRCUIT ANALYSIS [J].

CHANG, FY ;

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IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1985, 29 (03) :252-262

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[7] TWO-DIMENSIONAL DEVICE SIMULATION PROGRAM - 2DP [J].

GAUR, SP ;

HABITZ, PA ;

PARK, YJ ;

COOK, RK ;

HUANG, YS ;

WAGNER, LF .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1985, 29 (03) :242-251

[8]

GETREU IE, 1978, MODELING BIPOLAR TRA

[9] SEMICONDUCTOR ANALYSIS USING FINITE-ELEMENTS .1. COMPUTATIONAL ASPECTS [J].

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MACK, MH ;

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IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1981, 25 (04) :232-245

[10]

NAKAMURA T, 1984, ISSCC DIG TECH PAP I, V27, P152

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