TWO-DIMENSIONAL DEVICE SIMULATION PROGRAM - 2DP

被引：24

作者：

GAUR, SP ^{[1
]}

HABITZ, PA ^{[1
]}

PARK, YJ ^{[1
]}

COOK, RK ^{[1
]}

HUANG, YS ^{[1
]}

WAGNER, LF ^{[1
]}

机构：

[1] GOLDSTAR SEMICOND CORP,SEOUL,SOUTH KOREA

来源：

IBM JOURNAL OF RESEARCH AND DEVELOPMENT | 1985年 / 29卷 / 03期

关键词：

D O I：

10.1147/rd.293.0242

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

引用

页码：242 / 251

页数：10

共 19 条

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[4]

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[8] TEMPERATURE-DEPENDENCE OF CARRIER IONIZATION RATES AND SATURATED VELOCITIES IN SILICON [J].

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[9] 2-DIMENSIONAL CARRIER FLOW IN A TRANSISTOR STRUCTURE UNDER NONISOTHERMAL CONDITIONS [J].

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[10] PERFORMANCE LIMITATIONS OF SILICON BIPOLAR-TRANSISTORS [J].

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