SPECTROSCOPIC CHARACTERIZATION OF POLYSILICON SOLAR-CELLS

被引：1

作者：

MANAMOHANAN, SB

GARG, RK

PARTHASARATHI, S

PRADHAN, MM

机构：

[1] National Physical Laboratory, Dr K S Krishnan Marg, New Delhi

来源：

BULLETIN OF MATERIALS SCIENCE | 1995年 / 18卷 / 02期

关键词：

POLYSILICON; SOLAR CELL; SPECTRAL RESPONSE; DIFFUSION LENGTH;

D O I：

10.1007/BF02747528

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Polysilicon ingots were made by float zone, using solar grade silicon (SOG-Si) prepared by acid leaching of metallurgical grade silicon (MG-Si). Impurity conte?ts of the MG-Si and SOG-Si were analysed by emission spectroscopy and Fourier transform infrared spectroscopy. The main metal impurities Ca, Al, Fe, Cu, Mn, Mg, V, Ti and Zn and non-metal impurities C, O and B present in the two types of samples were determined. Elemental analysis for a knowledge of the impurity content is important to correlate its effect on the spectral response and diffusion length of minority carrier, and to determine solar cell process reliability. Spectral response and diffusion length for float zone silicon solar cell have been determined.

引用

页码：103 / 106

页数：4

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