LIQUID-PHASE EPITAXY AND CHARACTERIZATION OF SI1-XGEX LAYERS ON SI SUBSTRATES

被引：37

作者：

HANSSON, PO ^{[1
]}

WERNER, JH ^{[1
]}

TAPFER, L ^{[1
]}

TILLY, LP ^{[1
]}

BAUSER, E ^{[1
]}

机构：

[1] MAX PLANCK INST FESTKORPERFORSCH,W-7000 STUTTGART 80,GERMANY

来源：

JOURNAL OF APPLIED PHYSICS | 1990年 / 68卷 / 05期

关键词：

D O I：

10.1063/1.346572

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Liquid-phase epitaxy allows SiGe alloys of good quality to be grown on Si substrates. We deposit single crystalline, n-type Si1-xGex films with 0.7<x<1 from Bi solutions on (111)-oriented Si. The films are up to several μm thick and are uniform in thickness and in composition. The analysis by x-ray diffraction indicates good crystallinity and a dislocation density below 5×107 cm-2. Photoluminescence measurements show well-resolved peaks with the smallest linewidths reported so far for epitaxial SiGe. Hall-effect measurements yield electron concentrations around 1×1016 cm-3 and room-temperature electron mobilities of up to 340 cm2/V s.

引用

页码：2158 / 2163

页数：6

共 55 条

[51] HETEROEPITAXY OF VACUUM-EVAPORATED GE FILMS ON SINGLE-CRYSTAL SI
TSAUR, BY
GEIS, MW
FAN, JCC
GALE, RP
[J]. APPLIED PHYSICS LETTERS, 1981, 38 (10) : 779 - 781
[52] THE EFFECTS OF MISFIT DISLOCATION NUCLEATION AND PROPAGATION ON SI/SI1-XGEX CRITICAL THICKNESS VALUES
TUPPEN, CG
GIBBINGS, CJ
HOCKLY, M
[J]. JOURNAL OF CRYSTAL GROWTH, 1989, 94 (02) : 392 - 404
[53] OPTIMUM SI-SI1-XGEX STRUCTURES WITH STRONG INFRARED-SPECTRA
TURTON, RJ
JAROS, M
[J]. APPLIED PHYSICS LETTERS, 1990, 56 (08) : 767 - 769
[54] Van de Pauw L.J., 1958, PHILIPS RES REP, V13, P1
[55] NEAR-BAND-GAP PHOTOLUMINESCENCE OF SI-GE ALLOYS
WEBER, J
ALONSO, MI
[J]. PHYSICAL REVIEW B, 1989, 40 (08): : 5683 - 5693

← 1 2 3 4 5 6 →