THIN-FILM ADHESION IMPROVEMENT UNDER PHOTON IRRADIATION

被引：13

作者：

KELLOCK, AJ ^{[1
]}

NYBERG, GL ^{[1
]}

WILLIAMS, JS ^{[1
]}

机构：

[1] ROYAL MELBOURN INST TECHNOL,CTR MICROELECTR TECHNOL,MELBOURNE,VIC 3000,AUSTRALIA

来源：

VACUUM | 1985年 / 35卷 / 12期

关键词：

SEMICONDUCTOR DEVICES - Radiation Effects - SILVER AND ALLOYS - Adhesion;

D O I：

10.1016/0042-207X(85)90326-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This paper outlines several observations relating to the modification of the adhesion of thin Al and Au films to semiconductors and oxides by photon irradiation at energies up to 21 ev. Results provide strong evidence that secondary processes (i. e. charged carriers generated by the incident photons) play a major role in bonding rearrangements and adhesion improvement at metal-non-metal interfaces.

引用

页码：625 / 628

页数：4

共 14 条

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[8] THIN-FILM ADHESION CHANGES INDUCED BY ELECTRON-IRRADIATION [J].

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[9]

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[10] INFLUENCE OF AN ELECTRIC-FIELD ON BEAM-INDUCED ADHESION ENHANCEMENT [J].

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APPLIED PHYSICS LETTERS, 1984, 45 (10) :1067-1069

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